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2"-12" EPI Wafers


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4" EPI Wafers

Item

Qty in Stock

Price $/Qty

Substrate
    Size             Type         Res. Wcm

EPI
um       Type    Wcm

Source

Comment

E0-1

25

29.00

4"из525um

n-type Si:As[111-2.5⊦dm;]

0.001-0.004

4.47 Б5%

n-type Si:P 

1.07 Б7%

ITME

N/N++

E1-1

4

33.00

4"из525um

n- Si:Sb[111]

0.006-0.020

12.75

n- Si:P 

3.0

ITME

N/N+

E1-2

4

33.00

4"из525um

n- Si:Sb[111]

0.006-0.020

15.0

n- Si:P

2.0

ITME

N/N+

E1-4

14

33.00

4"из525um

n- Si:Sb[111]

0.006-0.020

30.0

n- Si:P

8.0

ITME

N/N+

E1-5

2

36.00

4"из525um

n- Si:Sb[111]

0.006-0.020

40.5

n- Si:P

25.0

ITME

N/N+

E1-6

4

33.00

4"из525um

n- Si:Sb[111]

0.006-0.020

16.0

n- Si:P

6.0

ITME

N/N+

E1-7

6

33.00

4"из525um

n- Si:Sb[111]

0.006-0.020

7.0

n- Si:P

1.1

ITME

N/N+

E1-8

13

39.00

4"из525um

n- Si:Sb[111]

0.006-0.020

60.0

n- Si:P

45.0

ITME

N/N+

E1-10

6

33.00

4"из525um

n- Si:Sb[111]

0.006-0.020

35.0

n- Si:P

17.5

ITME

N/N+

E1-11

3

33.00

4"из525um

n- Si:Sb[111]

0.006-0.020

14.0

n- Si:P

4.25

ITME

N/N+

E1-12

6

39.00

4"из525um

n- Si:Sb[111]

0.006-0.020

60.0

n- Si:P

58.75

ITME

N/N+

E1-13

5

36.00

4"из525um

n- Si:Sb[111]

0.006-0.020

36.0

n- Si:P

28.0

ITME

N/N+

E1-14

4

36.00

4"из525um

n- Si:Sb[111]

0.006-0.020

40.0

n- Si:P

28.0

ITME

N/N+

E1-15

16

39.00

4"из525um

n- Si:Sb[111]

0.006-0.020

53.0

n- Si:P

43.0

ITME

N/N+

E1-17

8

39.00

4"из525um

n- Si:Sb[111]

0.006-0.020

53.0

n- Si:P

50.0

ITME

N/N+

E1-18

7

68.00

4"из525um

n- Si:Sb[111]

0.006-0.020

105.0

n- Si:P

4000.0

ITME

N/N+

E1-19

6

39.00

4"из525um

n- Si:Sb[111]

0.006-0.020

60.0

n- Si:P

60.0

ITME

N/N+

E2-1

4

33.00

4"из400um

n- Si:Sb[111]

0.006-0.020

25.0

n- Si:P

0.04

ITME

N+/N+

E2-2

5

36.00

4"из400um

n- Si:Sb[111]

0.006-0.020

25.0

n- Si:P

0.075

ITME

N+/N+

E4-1

18

33.00

4"из525um

p- Si:B[111]

0.008-0.016

28.0

p- Si:B

6.0

ITME

P/P+

E4-2

4

33.00

4"из525um

p- Si:B[111]

0.008-0.016

14.0

p- Si:B

4.0

ITME

P/P+

E4-4

11

39.00

4"из525um

p- Si:B[111]

0.008-0.016

35.0

p- Si:B

50.0

ITME

P/P+

E4-5

7

59.00

4"из525um

p- Si:B[111]

0.008-0.016

28.5

p- Si:B

150.0

ITME

P/P+

E4-6

2

46.00

4"из525um

p- Si:B[111]

0.008-0.016

44.0

p- Si:B

60.0

ITME

P/P+

E4-7

5

46.00

4"из525um

p- Si:B[111]

0.008-0.016

40.0

p- Si:B

58.0

ITME

P/P+

E4-8

4

36.00

4"из525um

p- Si:B[111]

0.008-0.016

10.0
3.0

n- Si:P
p- Si:B

3.0
1.2

ITME

N/P/P+

E4-9

9

36.00

4"из525um

p- Si:B[111]

0.008-0.016

10.0
3.0

n- Si:P
p- Si:B

3.0
1.1

ITME

N/P/P+

E5-1

2

39.00

4"из525um

n- Si:As[111]

0.001-0.005

67.5

n- Si:P

15.5

ITME

N/N++

3" EPI Silicon

Item

Qty in Stock

Price $/Qty

Substrate
Size            Type          Res.Wcm

EPI
um       Type    Wcm

Source

Comment

F667

240

17.00

3"из525um

n- Si:P[111]

0.001-0.005

4.0-5.0

n- Si:P

1.1-1.4

Motorola

N/N++

E6-2

15

36.00

3"из381um

p- Si:B[111]

0.012-0.020

31.0

p- Si:B

9.0

ITME

P/P+

E6-3

4

46.00

3"из381um

p- Si:B[111]

0.012-0.020

35.0

p- Si:B

250.0

ITME

P/P+

E6-4

10

46.00

3"из381um

p- Si:B[111]

0.012-0.020

32.0

p- Si:B

150.0

ITME

P/P+

E6-5

10

46.00

3"из381um

p- Si:B[111]

0.012-0.020

32.0

p- Si:B

300.0

ITME

P/P+

E7-1

20

30.00

3"из381um

p- Si:B[111]

0.004-0.008

42.0

n- Si:P

0.16

ITME

N/P++

E7-2

8

30.00

3"из381um

p- Si:B[111]

0.004-0.008

42.0

n- Si:P

1.26

ITME

N/P++

E7-3

10

30.00

3"из381um

p- Si:B[111]

0.004-0.008

42.0

n- Si:P

0.136

ITME

N/P++

E7-4

10

30.00

3"из381um

p- Si:B[111]

0.004-0.008

42.0

n- Si:P

0.98

ITME

N/P++

E7-5

25

30.00

3"из381um

p- Si:B[111]

0.004-0.008

52.0

n- Si:P

6.4

ITME

N/P++

E7-6

14

30.00

3"из381um

p- Si:B[111]

0.004-0.008

42.0

n- Si:P

0.237

ITME

N/P++

E7-7

20

30.00

3"из381um

p- Si:B[111]

0.004-0.008

42.0

n- Si:P

1.67

ITME

N/P++

E8-1

7

30.00

3"из355um

n- Si:As[111]

0.001-0.005

34.0

n- Si:P

11.0

ITME

N/N++

E8-2

9

36.00

3"из355um

n- Si:As[111]

0.001-0.005

80.0

n- Si:P

12.0

ITME

N/N++

E8-3

8

36.00

3"из355um

n- Si:As[111]

0.001-0.005

100.0

n- Si:P

12.0

ITME

N/N++

E8-4

18

30.00

3"из355um

n- Si:As[111]

0.001-0.005

34.0

n- Si:P

3.5

ITME

N/N++

E9-1

13

30.00

3"из381um

n- Si:As[111]

0.001-0.005

12.0

n- Si:P

1.7

ITME

N/N++

E9-2

13

30.00

3"из381um

n- Si:As[111]

0.001-0.005

5.5

n- Si:P

1.1

ITME

N/N++

E9-3

30

33.00

3"из381um

n- Si:As[111]

0.001-0.005

57.0

n- Si:P

13.0

ITME

N/N++

E9-4

8

30.00

3"из381um

n- Si:As[111]

0.001-0.005

11.0

n- Si:P

2.1

ITME

N/N++

E9-5

20

30.00

3"из381um

n- Si:As[111]

0.001-0.005

12.0

n- Si:P

1.6

ITME

N/N++

E9-6

8

30.00

3"из381um

n- Si:As[111]

0.001-0.005

30.0

n- Si:P

4.0

ITME

N/N++

E10-1

15

39.00

3"из508um

n- Si:As[111]

0.001-0.005

85.0

n- Si:P

66.0

ITME

N/N++

E10-2

10

39.00

3"из508um

n- Si:As[111]

0.001-0.005

75.0

n- Si:P

66.0

ITME

N/N++

E11-1

6

30.00

3"из381um

n- Si:Sb[111]

0.005-0.017

30.5

n- Si:P

6.75

ITME

N/N+