Gallium Nitride Wafers and Aluminum Nitride

The Blue Laser Diode : GaN Based Light Emitters and Lasers



Specs!

1. GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate. 50 mm diam on axis, n-type, GaN thickness ~0.5 um

2. GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.

3. GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide. 50mm in diameter on-axis, n-type. GaN thickness ~(0.5-0.8) um. AIN thickness ~0.1um.

4. GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire. 50mm in diameter, on-axis, n-type, GaN thickness ~(0.5-0.8) um, AIN thickness ~0.1 um.

GaN on Sapphire UniversityWafer.com Email chris@universitywafer.com

50.8mm 430um SSP c-plane 0001

<5

<10

10 or more

20 or more

 

 

 

 

 

un-doped GaN template ~2.0 ㎛

 $          195.60

 $  185.82

 $    176.04

 $  166.26

un-doped GaN template ~4.5 ㎛

 $          244.50

 $  232.28

 $    220.05

 $  207.83

n-doped GaN template ~4.5 ㎛

 $          244.50

 $  232.28

 $    220.05

 $  207.83

p-doped GaN template ~2.0 ㎛

 $          374.90

 $  356.16

 $    337.41

 $  318.67

p-doped GaN template ~3.0 ㎛

 $          733.50

 $  696.83

 $    660.15

 $  623.48