The Blue Laser Diode : GaN Based Light Emitters and Lasers
1. GaN epitaxial wafers consist of GaN layer on 6H-SiC substrate. 50 mm diam on axis, n-type, GaN thickness ~0.5 um
2. GaN layer on sapphire, 50mm diameter on-axis, n-type, GaN thickness 0.5-10 um.
3. GaN/AIN/SiC epitaxial wafer consisting of GaN layer on AIN layer on 6H silicon carbide. 50mm in diameter on-axis, n-type. GaN thickness ~(0.5-0.8) um. AIN thickness ~0.1um.
4. GaN/AIN/AI2O3 epitaxial wafer consists of GaN layer on AIN layer on sapphire. 50mm in diameter, on-axis, n-type, GaN thickness ~(0.5-0.8) um, AIN thickness ~0.1 um.
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GaN on Sapphire UniversityWafer.com Email chris@universitywafer.com |
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50.8mm 430um SSP c-plane 0001 |
<5 |
<10 |
10 or more |
20 or more |
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un-doped GaN template ~2.0 ㎛ |
$ 195.60 |
$ 185.82 |
$ 176.04 |
$ 166.26 |
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un-doped GaN template ~4.5 ㎛ |
$ 244.50 |
$ 232.28 |
$ 220.05 |
$ 207.83 |
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n-doped GaN template ~4.5 ㎛ |
$ 244.50 |
$ 232.28 |
$ 220.05 |
$ 207.83 |
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p-doped GaN template ~2.0 ㎛ |
$ 374.90 |
$ 356.16 |
$ 337.41 |
$ 318.67 |
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p-doped GaN template ~3.0 ㎛ |
$ 733.50 |
$ 696.83 |
$ 660.15 |
$ 623.48 |