MATERIALS SPECIFICATIONS FOR GaInAs Based PIN STRUCTURE

Layer

Material

GaAs %

Thickness um

Free Carrier Density

N-Na by C-V (CM-3)

Type

Dopant

5

InGaAs

0.53

0.25

<1 E+16

n

4

InP

0.8

1-5 E+15

n

S

3

InGaAs

0.53

5

<5E+14

U/D

2

InP

0.53

0.7

1-3 E+17

n

S

1

InP

0.3

~1E+18

n

S

InP

see below

Additional Specifications

Thickness uniformity

Plus or minus 5.0% over inner 40mm diameter of 2" wafer

Thickness at wafer centre

Within about 10% of specified value

Doping level uniformity

About 10.0% over inner 40mm diameter of 2" wafer

Doping level at wafer centre

Within about 20% of specified value

Relaxed cubic lattice mismatch

to lie between -1 E-04a nd -9E-04

Peak Photoluminescence wavelength

N/A

Defect Density

<= 50cm-2 (size particles >=2.5um); and no surface texture

Substrate Specification

Material

InP-S

Major Flat

16 +-2mm

Technique

LEC

Minor Flat

8 +-2mm

Size

50+-0.3mm

Edge rounding

0.25 R mm

Carrier conc.

3-8 E+18cm-3

Orientation

(100)+-5 deg

EPD

<5 E+2cm-2; PUA>+80%

Flat spec

EJ

Thickness

350+-25mm

Surface finish

P/E

Inferred from C-V to Hall effect calibrations