Indium Antimonide


'Epitaxy Ready' Polished wafers
Single crystals are grown in a pure fused silica system by the Czochralski method from multiple zone refined polycrystalline ingot.

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Lot #

Size

Specs

INSB5729

50.8 mm x 450 um

(100) N/Undoped cc: 4-7x1014 EPD <200, 2 pol Epi

INSB5728

50.8 mm x 450 um

(111)A ,N/Undpd cc: 4-7x1014 EPD <200, 2 pol Epi

INSB5885

50.8 mm x 450 um

(100) N/Te cc: 3-5x1017 EPD <200, 1 pol Epi